分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ~100 nm. Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons. Compared with the SNSPD, the superconducting microstrip single-photon detector (SMSPD) has smaller kinetic inductance, higher working current, and lower requirement in fabrication accuracy, providing potential applications in the development of ultra-large active area detectors. However, the study on SMSPD is still in its infancy, and the realization of its high-performance and practical use remains an opening question. This study demonstrates a NbN SMSPD with a saturated system detection efficiency (SDE) of ~92.2% at a dark count rate of ~200 cps, a polarization sensitivity of ~1.03, and a minimum timing jitter of ~48 ps, at the telecom wavelength of 1550 nm when coupled with a single mode fiber and operated at 0.84 K. Furthermore, the detector's SDE is over 70% when operated at a 2.1-K closed-cycle cryocooler.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency conversions, including second-, third-, fourth-harmonic generation were observed. Cascaded Raman lasing was demonstrated in the SiC microresonator for the first time to the best of our knowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm were achieved using a dispersion-engineered SiC microresonator. Our demonstration is a significant milestone in the development of SiC photonic integrated devices.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation semiconductor, silicon carbide (SiC), offers the broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, and CMOS-compatible device fabrication process. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optical and optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, high functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and discussed. As a still-developing integrated photonic platform, the prospects and challenges of SiC material platform in the field of integrated photonics are also discussed, followed by potential solutions.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: Thin film 4H-silicon carbide (4H-SiC) is emerging as a contender for realizing large-scale optical quantum circuits due to its high CMOS technology compatibility and large optical nonlinearities. Though, challenges remain in producing wafer-scale 4H-SiC thin film on insulator (4H-SiCOI) for dense integration of photonic circuits, and in efficient coupling of deterministic quantum emitters that are essential for scalable quantum photonics. Here we demonstrate hybrid integration of self-assembled InGaAs quantum dots (QDs) based single-photon sources (SPSs) with wafer-scale 4H-SiC photonic chips prepared by ion slicing technique. By designing a bilayer vertical coupler, we realize generation and highly efficient routing of single-photon emission in the hybrid quantum photonic chip. Furthermore, we realize a chip-integrated beamsplitter operation for triggered single photons through fabricating a 1x2 multi-mode interferometer (MMI) with a symmetric power splitting ratio of 50:50. The successful demonstration of heterogeneously integrating QDs-based SPSs on 4H-SiC photonic chip prepared by ion slicing technique constitutes an important step toward CMOS-compatible, fast reconfigurable quantum photonic circuits with deterministic SPSs.