分类： 光学 >> 量子光学 提交时间： 2023-02-19
Changhao Han
Zhao Zheng
Haowen Shu
Ming Jin
Jun Qin
Ruixuan Chen
Yuansheng Tao
Bitao Shen
Bowen Bai
Fenghe Yang
Yimeng Wang
Haoyu Wang
Feifan Wang
Zixuan Zhang
Shaohua Yu
Chao Peng
Xingjun Wang
摘要： Silicon modulators are key components in silicon photonics to support the dense integration of electro-optic (EO) functional elements on a compact chip for various applications including high-speed data transmission, signal processing, and photonic computing. Despite numerous advances in promoting the operation speed of silicon modulators, a bandwidth ceiling of 67 GHz emerges in practices and becomes an obstacle to paving silicon photonics toward Tbps level data throughput on a single chip. Here, we theoretically propose and experimentally demonstrate a design strategy for silicon modulators by employing the slow light effect, which shatters the present bandwidth ceiling of silicon modulators and pushes its limit beyond 110 GHz in a small footprint. The proposed silicon modulator is built on a coupled-resonator optical waveguide (CROW) architecture, in which a set of Bragg gratings are appropriately cascaded to give rise to a slow light effect. By comprehensively balancing a series of merits including the group index, photon lifetime, electrical bandwidth, and losses, we found the modulators can benefit from the slow light for better modulation efficiency and compact size while remaining their bandwidth sufficiently high to support ultra-high-speed data transmission. Consequently, we realize a modulator with an EO bandwidth of 110 GHz in a length of 124 {\mu}m, and demonstrate a data rate beyond 110 Gbps by applying simple on-off keying modulation for a DSP-free operation. Our work proves that silicon modulators beyond 110 GHz are feasible, thus shedding light on the potentials of silicon photonics in ultra-high-bandwidth applications such as data communication, optical interconnection, and photonic machine learning.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Yuansheng Tao
Fenghe Yang
Zihan Tao
Lin Chang
Haowen Shu
Ming Jin
Yan Zhou
Zhangfeng Ge
Xingjun Wang
摘要： Microwave photonics (MWP), harnessing the tremendous bandwidth of light to generate, process and measure wideband microwave signals, are poised to spark a new revolution for the information and communication fields. Within the past decade, new opportunity for MWP has emerged driven by the advances of integrated photonics. However, despite significant progress made in terms of integration level, a fully on-chip MWP functional system comprising all the necessary photonic and electronic components, is yet to be demonstrated. Here, we break the status quo and provide a complete on-chip solution for MWP system, by exploiting hybrid integration of indium phosphide, silicon photonics and complementary metal-oxide-semiconductor (CMOS) electronics platforms. Applying this hybrid integration methodology, a fully chip-based MWP microwave instantaneous frequency measurement (IFM) system is experimentally demonstrated. The unprecedented integration level brings great promotion to the compactness, reliability, and performances of the overall MWP IFM system, including a wide frequency measurement range (2-34 GHz), ultralow estimation errors (10.85 MHz) and a fast response speed (0.3 ns). Furthermore, we deploy the chip-scale MWP IFM system into realistic application tasks, where diverse microwave signals with rapid-varying frequencies at X-band (8-12 GHz) are accurately identified in real-time. This demonstration marks a milestone for the development of integrated MWP, by providing the technology basis for the miniaturization and massive implementations of various MWP functional systems.
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