分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: We report an on-chip single mode microlaser with low-threshold fabricated on Erbium doped lithium niobate on insulator (LNOI). The single mode laser emission at 1550.5 nm wavelength is generated in a coupled photonic molecule, which is facilitated by Vernier effect when pumping the photonic molecule at 970 nm. A threshold pump power as low as 200 uW is demonstrated thanks to the high quality factor above 10^6. Moreover, the linewidth of the microlaser reaches 4 kHz, which is the best result in LNOI microlasers. Such single mode micro-laser lithographically fabricated on chip is highly in demand by photonic community.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: We demonstrate an on-chip single-mode Er3+-doped thin film lithium niobate (Er: TFLN) laser which consists of a Fabry-P\'erot (FP) resonator based on Sagnac loop reflectors (SLRs). The fabricated Er: TFLN laser has a footprint of 6.5 mmx1.5 mm with a loaded quality (Q) factor of 1.6x105 and a free spectral range (FSR) of 63 pm. We generate the single-mode laser around 1550-nm wavelength with a maximum output power of 44.7 {\mu}W and a slope efficiency of 0.18 %.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both \c{hi}^(2) and \c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency conversions, including second-, third-, fourth-harmonic generation were observed. Cascaded Raman lasing was demonstrated in the SiC microresonator for the first time to the best of our knowledge. Broadband Kerr frequency combs covering from 1300 to 1700 nm were achieved using a dispersion-engineered SiC microresonator. Our demonstration is a significant milestone in the development of SiC photonic integrated devices.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: We demonstrate a robust low-loss optical interface by tiling passive (i.e., without doping of active ions) thin film lithium niobate (TFLN) and active (i.e., doped with rare earth ions) TFLN substrates for monolithic integration of passive/active lithium niobate photonics. The tiled substrates composed of both active and passive areas allow to pattern the mask of the integrated active passive photonic device at once using a single continuous photolithography process. The interface loss of tiled substrate is measured as low as 0.26 dB. Thanks to the stability provided by this approach, a four-channel waveguide amplifier is realized in a straightforward manner, which shows a net gain of ~5 dB at 1550-nm wavelength and that of ~8 dB at 1530-nm wavelength for each channel. The robust low-loss optical interface for passive/active photonic integration will facilitate large-scale high performance photonic devices which require on-chip light sources and amplifiers.
分类: 光学 >> 量子光学 提交时间: 2023-02-19
摘要: We overcome the difficulty in realizing a monolithic waveguide-coupled microring laser integrated on erbium-doped thin film lithium niobate (Er: TFLN) using photolithography assisted chemo-mechanical etching (PLACE) technique. We demonstrate an integrated single-frequency microring laser operating around 1531 nm wavelength. The PLACE technique, enabling integrated Er: TFLN photonics with low propagation loss, can thus be used to realize low cost mass production of monolithic on-chip microlasers with applications ranging from optical communication and photonic integrated circuit (PIC) to precision metrology and large-scale sensing.