分类： 光学 >> 量子光学 提交时间： 2023-02-19
摘要： Dirac Fermion, which is the low energy collective excitation near the Dirac cone in monolayer graphene, have gained great attention by low energy Terahertz probe. In the case of undoped graphene, it has been generally understood that the ultrafast terahertz thermal relaxation is mostly driven by the electron-phonon coupling (EOP), which can be prolonged to tens and hundreds of picoseconds. However, for the high doped graphene, which manifests the negative photoinduced terahertz conductivity, there is still no consensus on the dominant aspects of the cooling process on a time scale of a few picoseconds. Here, the competition between the disorders assisted defect scattering and the electron-phonon coupling process in the cooling process of the graphene terahertz dynamics is systematically studied and disentangled. We verify experimentally that the ultrafast disorder assisted lattice-phonon interaction, rather than the electron-phonon coupling process, would play the key role in the ultrafast thermal relaxation of the terahertz dynamics. Furthermore, the cooling process features robustness which is independent on the pump wavelength and external temperature. Our finding is expected to propose a considerable possible cooling channel in CVD-graphene and to increase the hot electron extracting efficiency for the design of graphene-based photoconversion devices.
分类： 光学 >> 量子光学 提交时间： 2023-02-19
Yuqing Zou
Qiu-Shi Ma
Zeyu Zhang
Ruihua Pu
Wenjie Zhang
Peng Suo
Jiaming Chen
Di Li
Hong Ma
Xian Lin
Yuxin Leng
Weimin Liu
Juan Du
Guohong Ma
摘要： In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical vapor deposition method. Our experimental results reveal that, with photon-energy below the A-exciton of MoS2 monolayer, hot electrons transfer from graphene to MoS2 takes place in time scale of less than 0.5 ps, resulting in ultrafast formation of interfacial exciton in the heterostructure, subsequently, recombination relaxation of the interfacial exciton occurs in time scale of ~18 ps. A new model considering carrier heating and photogating effect in graphene is proposed to estimate the amount of carrier transfer in the heterostructure, which shows a good agreement with experimental result. Moreover, when the photon-energy is on-resonance with the A-exciton of MoS2, photogenerated holes in MoS2 are transferred to graphene layer within 0.5 ps, leading to the formation of interfacial exciton, the subsequent photoconductivity (PC) relaxation of graphene and bleaching recovery of A-exciton in MoS2 take place around ~10 ps time scale, ascribing to the interfacial exciton recombination. The faster recombination time of interfacial exciton with on-resonance excitation could come from the reduced interface barrier caused by bandgap renormalization effect. Our study provides deep insight into the understanding of interfacial charge transfer as well as the relaxation dynamics in graphene-based heterostructures, which are promising for the applications of graphene-based optoelectronic devices.
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